a d v a n ced p o w e r electr on i cs c o r p . ?2012 advanced power electronics corp. usa www.a-powerusa.com p -channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings symbol units v ds v gs i d a i d a i dm d at t a =2 5 c t s tg t j symbol value unit parameter rating gate-source voltage continuous drain current 3 continuous drain current 3 pulsed drain current 1 -55 to 150 c operating junction temperature range -55 to 150 c thermal data parameter storage temperature range a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the ap 44 07 gm- hf- 3 is in the so-8 package, which is widely used bv - 3 0v fast switching performance r 14 m w simple drive requirement low on-resistance rohs-compliant , halogen-free i - 10.7 a drain-source voltage - 3 0 v 2 5 v at t =25 c - 10.7 a at t = 7 0 c - 8.6 a - 5 0 a p total power dissipation 2.5 w linear derating factor 0.02 w/c for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as dc/dc converters. o rdering information rthj- c maximum thermal resistance, junction- case 25 c /w ap44 07 gm-hf-3 1/5 201207252-3 ap44 07 gm- hf- 3 t r : in rohs-compliant halogen-free s o-8 , shipped on tape and reel (30 00 pcs /reel) g d s s s s g d d d d so-8 (m) rthj-a maximum thermal resistance, junction- ambient 50 c /w http://
a d v a n ced p o w e r electr on i cs c o r p . ?2012 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =2 5 c (unless otherwise specified) source-drain diode notes: 1.pulse width limited by maximum junction temperature. 2.pulse test - pulse width < 300s , duty cycle < 2% this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. copper pad of fr4 board ; 125c/w on minimum copper pad. 2 3 .surface mounted on 1 in ap4407gm- hf- 3 2/5 symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua - 3 0 - - v d bv dss / d t j breakdown voltage temperature coefficient reference to 2 5c, i d =-1ma - -0.01 5 - v /c r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =- 10 a - - 14 m w v gs =-4.5v, i d =- 5 a - - 25 m w v gs(th) gate threshold voltage v ds =v gs , i d =-250ua - 1.0 - - 3.0 v g fs forward transconductance v ds =-10v, i d =- 10 a - 1 3 - s i dss drain-source leakage current (t j =25 o c) v ds =- 3 0v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =- 24 v, v gs =0v - - -25 ua i gss gate-source leakage v gs na q g total gate charge 2 i d =- 10 a - 28 45 nc q gs gate-source charge v ds =- 24 v - 5.2 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 19.8 - nc t d(on) turn-on delay time 2 v ds =-1 5 v - 1 2 - ns t r rise time i d =- 1 a - 1 1 - ns t d(off) turn-off delay time r g = 6.8 w , v gs =-10v - 97 - ns t f fall time r d =1 5 w - 72 - ns c iss input capacitance v gs =0v - 1960 3200 pf c oss output capacitance v ds =-25v - 5 90 - pf c rss reverse transfer capacitance f=1.0mhz - 465 - pf symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =- 2.0 a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =- 10 a, v gs =0 v - 36 - ns q rr reverse recovery charge di/dt=100a/s - 34 - nc = 2 5 v - - 100
a d v a n ced p o w e r electr on i cs c o r p . ?2012 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics ap4407gm- hf- 3 3/5 0 10 20 30 40 01 122 -v ds , drain-to-source voltage (v) -i d , dr a i n c u r r e nt (a ) t a =150 o c -10v -5.0v -4.5v -4.0v v g =-3.0v 10 15 20 25 35 79 1 1 -v gs , gate-to-source voltage (v) r ds(on) ( m w ) i d =-10a t a =25 o c 0.60 0.80 1.00 1.20 1.40 1.60 1.80 -50 0 50 100 150 t j , junction temperature ( o c) n o rmalize d r ds(on) v gs = -10v i d =-10a 0.01 0.10 1.00 10.00 100.00 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -v sd , source-to-drain voltage (v) -i s (a ) t j =25 o c t j =150 o c 0.6 1 1.4 1.8 2.2 2.6 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(t h) (v ) 0 10 20 30 40 0123 -v ds , drain-to-source voltage (v) -i d , dr a i n c u r r e nt (a ) t a =25 o c -10v -5.0v -4.5v -4.0v v g =-3.0v
a d v a n ced p o w e r electr on i cs c o r p . ?2012 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveforms fig 12. gate charge waveform typical electrical characteristics (cont.) t d(on) t r t d(off) t f v ds v gs 10% 90% ap4407gm- hf- 3 4/5 q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 14 02 46 8 1 0 1 2 1 4 1 6 1 8 q g , total gate charge (nc) -v gs , g a te to s o u rc e voltage ( v ) i d = -10a v ds = -24v 100 1000 10000 1 5 9 1 31 72 1 2 52 9 -v ds , drain-to-source voltage (v) c ( p f) f =1.0mh ciss coss crss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) n o rmalize d t h e rmal re spon se ( r th ja ) p dm duty factor = t/t peak t j = p dm x r thja + t a t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse rthja = 12 5c/w 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a ) 100us 1ms 10ms 100ms 1s 10s dc t a =25 o c single pulse
a d v a n ced p o w e r electr on i cs c o r p . ?2012 advanced power electronics corp. usa www.a-powerusa.com package dimensions: so-8 marking information: ap4407gm- hf- 3 5/5 millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e1 3.80 3.90 4.00 e 5.80 6.15 6.50 l 0.38 0.71 1.27 q 0 4.00 8.00 e 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. 1.27 typ c detail a a1 a 4 407 g m ywwsss package: product: ap4 407 detail a l q date/lot code (ywwsss) y : last digit of the year w w : work week ss s : lot code sequence e b 1 34 5 6 7 8 2 d e1 e gm = rohs-compliant halogen-free so-8
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